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AD845KN

Part # AD845KN
Description OP Amp Single GP ±18V 8-Pin PDIP
Category IC
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Analog Devices
Date Code: 0111
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
Precision, 16 MHz
CBFET Op Amp
AD845
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
CONNECTION DIAGRAMS
FEATURES
Replaces Hybrid Amplifiers in Many Applications
AC PERFORMANCE:
Settles to 0.01% in 350 ns
100 V/ms Slew Rate
12.8 MHz min Unity-Gain Bandwidth
1.75 MHz Full-Power Bandwidth at 20 V p-p
DC PERFORMANCE:
0.25 mV max Input Offset Voltage
5 mV/8C max Offset Voltage Drift
0.5 nA Input Bias Current
250 V/mV min Open-Loop Gain
4 mV p-p max Voltage Noise, 0.1 Hz to 10 Hz
94 dB min CMRR
Available in Plastic Mini-DIP, Hermetic Cerdip and
SOIC Packages. Also Available in Tape and Reel in
Accordance with EIA-481A Standard
PRODUCT DESCRIPTION
The AD845 is a fast, precise, N channel JFET input, monolithic
operational amplifier. It is fabricated using Analog Devices’
complementary bipolar (CB) process. Advanced laser-wafer
trimming technology enables the very low input offset voltage
and offset voltage drift performance to be realized. This preci-
sion, when coupled with a slew rate of 100 V/µs, a stable
unity-gain bandwidth of 16 MHz, and a settling time of 350 ns
0.01%—while driving a parallel load of 100 pF and 500
represents a combination of features unmatched by any FET
input IC amplifier. The AD845 can easily be used to upgrade
many existing designs which use BiFET or FET input hybrid
amplifiers and, in some cases, those which use bipolar input op
amps.
The AD845 is ideal for use in applications such as active filters,
high speed integrators, photo diode preamps, sample-and-hold
amplifiers, log amplifiers, and in buffering A/D and D/A con-
verters. The 250 µV max input offset voltage makes offset null-
ing unnecessary in many applications. The common-mode
rejection ratio of 110 dB over a ±10 V input voltage range
represents exceptional performance for a JFET input high
speed op amp. This, together with a minimum open-loop
gain of 250 V/mV ensures that 12-bit performance is achieved,
even in unity-gain buffer circuits.
The AD845 conforms to the standard op amp pinout except
that offset nulling is to V+. The AD845J and AD845K grade
devices are available specified to operate over the commercial
0°C to +70°C temperature range. AD845A and AD845B
devices are specified for operation over the –40°C to +85°C
industrial temperature range. The AD845S is specified to oper-
ate over the full military temperature range of –55°C to
+125°C. Both the industrial and military versions are available
in 8-pin cerdip packages. The commercial version is available in
an 8-pin plastic mini-DIP and 16-pin SOIC; “J” and “S” grade
chips are also available.
PRODUCT HIGHLIGHTS
1. The high slew rate, fast settling time, and dc precision of the
AD845 make it ideal for high speed applications requiring
12-bit accuracy.
2. The performance of circuits using the LF400, HA2520/2/5,
HA2620/2/5, 3550, OPA605, and LH0062 can be upgraded
in most cases.
3. The AD845 is unity-gain stable and internally compensated.
4. The AD845 is specified while driving 100 pF/500 loads.
Plastic Mini-DIP (N) Package
and Cerdip (Q) Package
16-Pin SOIC
(R-16) Package
AD845–SPECIFICATIONS
REV. D
–2–
(@ +258C and 615 V dc, unless otherwise noted)
Model AD845J/A AD845K/B AD845S
Conditions Min Typ Max Min Typ Max Min Typ Max Units
INPUT OFFSET VOLTAGE
1
Initial Offset 0.7 1.5 0.1 0.25 0.25 1.0 mV
T
MIN
–T
MAX
2.5 0.4 2.0 mV
Offset Drift 20 1.5 5.0 10 µV/°C
INPUT BIAS CURRENT
2
Initial V
CM
= 0 V 0.75 2 0.5 1 0.75 2 nA
T
MIN
–T
MAX
45/75 18/38 500 nA
INPUT OFFSET CURRENT
Initial V
CM
= 0 V 25 300 15 100 25 300 pA
T
MIN
–T
MAX
3/6.5 1.2/2.6 20 nA
INPUT CHARACTERISTICS
Input Resistance 10
11
10
11
10
11
k
Input Capacitance 4.0 4.0 4.0 pF
INPUT VOLTAGE RANGE
Differential ±20 ±20 ±20 V
Common Mode 610 +10.5/–13 610 +10.5/–13 610 +10.5/–13 V
Common-Mode Rejection V
CM
= ±10 V 86 110 94 113 86 110 dB
INPUT VOLTAGE NOISE 0.1 Hz to 10 Hz 4 4 4 µV p-p
f = 10 Hz 80 80 80 nV/Hz
f = 100 Hz 60 60 60 nV/Hz
f = 1 kHz 25 25 25 nV/Hz
f = 10 kHz 18 18 18 nV/Hz
f = 100 kHz 12 12 12 nV/Hz
INPUT CURRENT NOISE f = 1 kHz 0.1 0.1 0.1 pA/Hz
OPEN-LOOP GAIN V
O
= ±10 V
R
LOAD
2 k 200 500 250 500 200 500 V/mV
R
LOAD
500 100 250 125 250 100 250 V/mV
T
MIN
–T
MAX
70 75 50 V/mV
OUTPUT CHARACTERISTICS
Voltage R
LOAD
500 612.5 612.5 612.5 V
Current Short Circuit 50 50 50 mA
Output Resistance Open Loop 5 5 5
FREQUENCY RESPONSE
Small Signal Unity Gain 12.8 16 13.6 16 13.6 16 MHz
Full Power Bandwidth
3
V
O
= ±10 V
R
LOAD
= 500 1.75 1.75 1.75 MHz
Rise Time 20 20 20 ns
Overshoot 20 20 20 %
Slew Rate 80 100 94 100 94 100 V/µs
Settling Time 10 V Step
C
LOAD
= 100 pF
R
LOAD
= 500
to 0.01% 350 350 500 350 500 ns
to 0.1% 250 250 250 ns
DIFFERENTIAL GAIN f = 4.4 MHz 0.04 0.04 0.04 %
DIFFERENTIAL PHASE f = 4.4 MHz 0.02 0.02 0.02 Degree
POWER SUPPLY
Rated Performance ±15 ±15 ±15 V
Operating Range 64.75 618 64.75 618 64.75 618 V
Rejection Ratio V
S
= ±5 to ±15 V 88 110 95 113 88 110 dB
Quiescent Current T
MIN
to T
MAX
10 12 10 12 10 12 mA
NOTES
1
Input offset voltage specifications are guaranteed after 5 minutes of operation at T
A
= +25°C.
2
Bias current specifications are guaranteed maximum at either input after 5 minutes of operation at T
A
= +25°C.
3
FPBW = slew rate/2 π V peak.
4
“S” grade T
MIN
–T
MAX
are tested with automatic test equipment at T
A
= –55°C and T
A
= +125°C.
All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units at final electrical test. Results from these tests are
used to calculate outgoing quality levels.
Specifications subject to change without notice.
AD845
REV. D
–3–
ORDERING GUIDE
Temperature Package Package
Model Range Description Option*
AD845JN 0°C to +70°C 8-Pin Plastic Mini-DIP N-8
AD845KN 0°C to +70°C 8-Pin Plastic Mini-DIP N-8
AD845JR-16 0°C to +70°C 16-Pin SOIC R-16
AD845AQ –40°C to +85°C 8-Pin Cerdip Q-8
AD845BQ –40°C to +85°C 8-Pin Cerdip Q-8
AD845SQ –55°C to +125°C 8-Pin Cerdip Q-8
AD845SQ/883B –55°C to +125°C 8-Pin Cerdip Q-8
5962-8964501PA –55°C to +125°C 8-Pin Cerdip Q-8
AD845JCHIPS 0°C to +70°C Die
AD845SCHIPS –55°C to +125°C Die
AD845JR-16-REEL 0°C to +70°C Tape & Reel
AD845JR-16-REEL7 0°C to +70°C Tape & Reel
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Internal Power Dissipation
2
Plastic Mini-DIP . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6 Watts
Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 Watts
16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + V
S
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +V
S
and –V
S
Storage Temperature Range
Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
N, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability .
2
Mini-DIP package: θ
JA
= 100°C/watt; cerdip package: θ
JA
= 110°C/watt. SOIC
package: θ
JA
= 100°C/W.
METALIZATION PHOTOGRAPH
Dimensions shown in inches and (mm).
Contact factory for latest dimensions.
SUBSTRATE CONNECTED TO +V
S
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