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79LV0408RT2FK-25

Part # 79LV0408RT2FK-25
Description EEPROM, Low Voltage 4 Megabit512kx8-bit, Rad-Hard, 40P FP
Category IC
Availability In Stock
Qty 5
Manufacturer Available Qty
MAXWELL TECHNOLOGIES
Date Code: 0503
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
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All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
Low Voltage 4 Megabit
(512k x 8-bit) EEPROM
79LV0408
©2005 Maxwell Technologies
All rights reserved.
01.11.05 Rev 7
• Four 128k x 8-bit EEPROMs MCM
•R
AD-PAK® radiation-hardened against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects
- SEL > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
- SEU = 18 MeV/mg/cm
2
write mode
• Package:
• - 40 pin R
AD-PAK® flat pack
• - 40 pin X-Ray Pak
TM
flat pack
• - 40 pin Rad-Tolerant flat pack
• High speed:
-200 and 250 ns access times
available
•Data
Polling and Ready/Busy signal
• Software data protection
• Write protection by RES
pin
• High endurance
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
- 88 mW/MHz active mode
- 440 µW standby mode
DESCRIPTION:
Maxwell Technologies’ 79LV0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, depending upon space mission. Using Maxwell Technol-
ogies’ patented radiation-hardened R
AD-PAK® MCM
packaging technology, the 79LV0408 is the first radiation-
hardened 4 Megabit MCM EEPROM for space applications.
The 79LV0408 uses four 1 Megabit high-speed CMOS die to
yield a 4 Megabit product. The 79LV0408 is capable of in-sys-
tem electrical Byte and Page programmability. It has a 128
bytes Page Programming function to make its erase and write
operations faster. It also features Data Polling and a Ready/
Busy signal to indicate the completion of erase and program-
ming operations. In the 79LV0408, hardware data protection is
provided with the RES
pin, in addition to noise protection on
the WE
signal. Software data protection is implemented using
the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, the R
AD-PAK® package provides
greater than 100 krad (Si) radiation dose tolerance. This prod-
uct is available with screening up to Maxwell Technologies
self-defined Class K.
128K x 8 128K x 8 128K x 8 128K x 8
I/ O
0-7
A
0-16
WE
R/ B
RE S
OE
CE
1
CE
2
CE
3
CE
4
FEATURES:
Logic Diagram
M
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2
All data sheets are subject to change without notice
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
01.11.05 Rev 7
1. V
IN
MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 1. 79LV0408 PIN DESCRIPTION
PIN SYMBOL DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16 Address Input
17-19, 22-26 I/O0 to I/O7 Data Input/Output
29 OE
Output Enable
2, 3, 39, 38 CE1-4
Chip Enable 1 through 4
34 WE
Write Enable
1, 27, 40 VCC Power Supply
4, 20, 21, 37 VSS Ground
5 RDY/BUSY
Ready/Busy
35 RES
Reset
TABLE 2. 79LV0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage V
CC
-0.6 7.0 V
Input Voltage V
IN
-0.5
1
7.0 V
Package Weight RP 23 Grams
RT 10
Thermal Resistance ( RP Package) Tjc 7.3
°
C/W
Operating Temperature Range T
OPR
-55 125
°
C
Storage Temperature Range T
STG
-65 150
°
C
TABLE 3. 79LV0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage V
CC
3.0 3.6 V
Input Voltage
RES
_PIN
V
IL
V
IH
V
H
-0.3
1
2.2
V
CC
-0.5
1. V
IL
min = -1.0V for pulse width < 50 ns
0.8
V
CC
+0.3
V
CC
+1
V
V
V
Case Operating Temperature T
C
-55 125
°
C
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3
All data sheets are subject to change without notice
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
01.11.05 Rev 7
TABLE 4. 79LV0408 CAPACITANCE
1
(T
A
= 25
°
C, f = 1 MHz)
P
ARAMETER SYMBOL MIN MAX UNIT
Input Capacitance: V
IN
= 0 V
1
WE
CE
1-4
OE
A
0-16
1. Guaranteed by design.
C
IN
--
--
--
--
24
6
24
24
pf
Output Capacitance: V
OUT
= 0 V
1
C
OUT
48 pF
TABLE 5. DELTA PARAMETERS
PARAMETER CONDITION
I
CC1
+ 10% of value in Table 6
I
CC2
+ 10% of value in Table 6
I
CC3
+ 10% of value in Table 6
I
CC4
+ 10% of value in Table 6
TABLE 6. 79LV0408 DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.3V ±10%, T
A
= -55 TO +125°C)
P
ARAMETER TEST CONDITION SYMBOL SUBGROUPS MIN MAX UNITS
Input Leakage Current V
CC
= 5.5V, V
IN
= 5.5V
1
I
IL
1, 2, 3 µA
CE
1-4
-- 2
1
OE, WE -- 8
A
0-16
-- 8
Output Leakage Current V
CC
= 5.5V, V
OUT
= 5.5V/0.4V I
LO
1, 2, 3 -- 8 µA
Standby V
CC
Current
CE = V
CC
I
CC1
-- 80 µA
CE
= V
IH
I
CC2
-- 4 mA
Operating V
CC
Current
2
I
OUT
= 0mA, Duty = 100%,
Cycle = 1µs at V
CC
= 5.5V
I
CC3
1, 2, 3 -- 15 mA
I
OUT
= 0mA, Duty = 100%,
Cycle = 150ns at V
CC
= 5.5V
I
CC4
1, 2, 3 -- 50
Input Voltage
RES
_PIN
V
IL
1, 2, 3 -- 0.8 V
V
IH
2.2 --
V
H
V
CC
-0.5 --
Output Voltage I
OL
= 2.1 mA V
OL
1, 2, 3 -- 0.4 V
I
OH
= -0.4 mA V
OH
2.4 --
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