MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM8996-30
TECHNICAL DATA
Rev. July 2009
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
P1dB=45.0dBm at 8.9GHz to 9.6GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB=7.0dB at 8.9GHz to 9.6GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point
P
1dB
dBm 44.0 45.0
⎯
Power Gain at 1dB Gain
Compression Point
G
1dB
dB 6.0 7.0
⎯
Drain Current I
DS1
A
⎯
10.0 11.5
Power Added Efficiency
η
add
VDS
= 10
V
IDSset≅7.0A
f
= 8.9 to 9.6GHz
%
⎯
25
⎯
Channel Temperature Rise ΔTch
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
°
C
⎯
⎯
100
Recommended gate resistance(Rg) : Rg= 10
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance
gm
V
DS
=
3V
I
DS
= 9.6A
S
⎯
5.5
⎯
Pinch-off Voltage V
GSoff
V
DS
=
3V
I
DS
= 290mA
V -0.7 -2.0 -4.5
Saturated Drain Current I
DSS
V
DS
=
3V
V
GS
= 0V
A
⎯
20.0
⎯
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -290
μ
A
V -5
⎯
⎯
Thermal Resistance R
th(c-c)
Channel to Case
°
C/W
⎯
1.0 1.1
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
