3
Absolute Maximum Ratings Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V
CC
+0.3V
Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65162S-9, HM-65162B-9,
HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Thermal Resistance θ
JA
(
o
C/W) θ
JC
(
o
C/W)
CERDIP Package . . . . . . . . . . . . . . . . 48 8
CLCC Package . . . . . . . . . . . . . . . . . . 66 12
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300
o
C
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications V
CC
= 5V ±10%; T
A
= -40
o
C to +85
o
C (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)
SYMBOL PARAMETER
LIMITS
UNITS TEST CONDITIONSMIN MAX
ICCSB1 Standby Supply Current - 50 µA HM-65162B-9, IO = 0mA,
E
= V
CC
- 0.3V, V
CC
= 5.5V
-100µA HM-65162S-9, HM65162-9,
IO = 0mA, E
= V
CC
- 0.3V,
V
CC
= 5.5V
-900µA HM-65162C-9, IO = 0mA,
E
= V
CC
- 0.3V, V
CC
= 5.5V
ICCSB Standby Supply Current - 8 mA E
= 2.2V, IO = 0mA, V
CC
= 5.5V
ICCEN Enabled Supply Current - 70 mA E
= 0.8V, IO = 0mA, V
CC
= 5.5V
ICCOP Operating Supply Current (Note 1) - 70 mA E
= 0.8V, IO = 0mA, f = 1MHz,
V
CC
= 5.5V
ICCDR Data Retention Supply Current - 20 µA HM-65162B-9, IO = 0mA,
V
CC
= 2.0V, E = VCC - 0.3V
-40µA HM-65162S-9, HM-65162-9,
IO = 0mA, V
CC
= 2.0V,
E
= V
CC
- 0.3V
-300µA HM-65162C-9, IO = 0mA,
V
CC
= 2.0V, E = V
CC
- 0.3V
VCCDR Data Retention Supply Voltage 2.0 - V
II Input Leakage Current -1.0 +1.0 µAVI = V
CC
or GND, V
CC
= 5.5V
IIOZ Input/Output Leakage Current -1.0 +1.0 µA VIO = V
CC
or GND, V
CC
= 5.5V
V
IL
Input Low Voltage -0.3 0.8 V V
CC
= 4.5V
V
IH
Input High Voltage 2.2 V
CC
+0.3 V V
CC
= 5.5V
VOL Output Low Voltage - 0.4 V IO = 4.0mA, V
CC
= 4.5V
VOH1 Output High Voltage 2.4 - V IO = -1.0mA, V
CC
= 4.5V
VOH2 Output High Voltage (Note 2) V
CC
-0.4 - V IO = -100µA, V
CC
= 4.5V
Capacitance T
A
= +25
o
C
SYMBOL PARAMETER MAX UNITS TEST CONDITIONS
CI Input Capacitance (Note 2) 10 pF f = 1MHz, All measurements are
referenced to device GND
CIO Input/Output Capacitance (Note 2) 12 pF
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
HM-65162
