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Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
FEATURES
• Low forward voltage
• Guard ring protected
• Very small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323
very small plastic SMD package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: S0.
The marking bar indicates the cathode.
lumns
12
MGU328
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
1PS76SB10 − plastic surface mounted package; 2 leads SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
−
30 V
I
F
continuous forward current −
200 mA
I
FRM
repetitive peak forward current t
p
≤ 1s;δ≤0.5
−
300 mA
I
FSM
non-repetitive peak forward current t
p
<10ms
−
600 mA
T
stg
storage temperature
−65
+150 °C
T
j
junction temperature
−
125 °C
T
amb
operating ambient temperature
−65
+125 °C
