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74HC08AP

Part # 74HC08AP
Description
Category IC
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Technical Document


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TC74HC08AP/AF/AFN
2007-10-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC08AP,TC74HC08AF,TC74HC08AFN
Quad 2-Input AND Gate
The TC74HC08A is a high speed CMOS 2-INPUT AND GATE
fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 2-stages including buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: t
pd
= 6 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 1 μA (max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
OH
| = I
OL
= 4 mA (min)
Balanced propagation delays: t
pLH
t
pHL
Wide operating voltage range: V
CC
(opr) = 2~6 V
Pin and function compatible with 74LS08
Pin Assignment
IEC Logic Symbol
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC08AP
TC74HC08AF
TC74HC08AFN
Weight
DIP14-P-300-2.54 : 0.96 g (typ.)
SOP14-P-300-1.27A : 0.18 g (typ.)
SOL14-P-150-1.27 : 0.12 g (typ.)
TC74HC08AP/AF/AFN
2007-10-01
2
Truth Table
A B Y
L L L
L H L
H L L
H H H
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range V
CC
0.5~7 V
DC input voltage V
IN
0.5~V
CC
+ 0.5 V
DC output voltage V
OUT
0.5~V
CC
+ 0.5 V
Input diode current I
IK
±20 mA
Output diode current I
OK
±20 mA
DC output current I
OUT
±25 mA
DC V
CC
/ground current I
CC
±50 mA
Power dissipation P
D
500 (DIP) (Note 2)/180 (SOP) mW
Storage temperature T
stg
65~150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = 40°C~65°C. From Ta = 65°C to 85°C a derating factor of 10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage V
CC
2~6 V
Input voltage V
IN
0~V
CC
V
Output voltage V
OUT
0~V
CC
V
Operating temperature T
opr
40~85 °C
Input rise and fall time t
r
, t
f
0~1000 (V
CC
= 2.0 V)
0~500 (V
CC
= 4.5 V)
0~400 (V
CC
= 6.0 V)
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
TC74HC08AP/AF/AFN
2007-10-01
3
Electrical Characteristics
DC Characteristics
Test Condition Ta = 25°C Ta = 40~85°C
Characteristics Symbol
V
CC
(V)
Min Typ. Max Min Max
Unit
High-level input
voltage
V
IH
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
V
Low-level input
voltage
V
IL
2.0
4.5
6.0
0.50
1.35
1.80
0.50
1.35
1.80
V
I
OH
= 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
5.9
High-level output
voltage
V
OH
V
IN
= V
IH
or
V
IL
I
OH
= 4 mA
I
OH
= 5.2 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
V
I
OL
= 20 μA
2.0
4.5
6.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
Low-level output
voltage
V
OL
V
IN
= V
IH
or
V
IL
I
OL
= 4 mA
I
OL
= 5.2 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
V
Input leakage
current
I
IN
V
IN
= V
CC
or GND 6.0 ±0.1 ±1.0 μA
Quiescent supply
current
I
CC
V
IN
= V
CC
or GND 6.0 1.0 10.0 μA
AC Characteristics
(C
L
= 15 pF, V
CC
= 5 V, Ta = 25°C, input: t
r
= t
f
= 6 ns)
Characteristics Symbol Test Condition Min Typ. Max Unit
Output transition time
t
TLH
t
THL
4 8 ns
Propagation delay time
t
pLH
t
pHL
6 12 ns
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