Elektronische Bauelemente
SSP7430N
17 A, 30 V, R
DS(ON)
13.5 m
N-Channel Enhancement MOSFET
18-Sep-2013 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
DS(on)
and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8PP 3K 13 inch
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage V
DS
30 V
Gate-Source Voltage V
GS
±20 V
T
A
=25°C 16
Continuous Drain Current
1
T
A
=70°C
I
D
13
A
Pulsed Drain Current
2
I
DM
50 A
Continuous Source Current (Diode Conduction)
1
I
S
2.3 A
T
A
=25°C 5.0
Power Dissipation
1
T
A
=70°C
P
D
3.2
W
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 ~ 150 °C
Thermal Resistance Data
t≦10 sec 25
Maximum Junction to Ambient
1
Steady-State
R
θJA
65
°C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Millimete
Millimete
REF.
Min. Max.
REF.
Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.3 BSC. b 5.2 BCS
C 0.15 0.25 c 0.30 0.50
D 3.8 BCS. d 1.27BSC
E 6.05 BCS. e 5.55 BCS.
F 0.03 0.30 f 0.10 0.40
G 4.35 BCS.
1.2 BCS.
L 0.40 0.70
SOP-8PP
