December 1994 2
Philips Semiconductors Product specification
256 x 8-bit CMOS EEPROMS
with I
2
C-bus interface
PCX8582X-2 Family
FEATURES
• Low power CMOS
– maximum active current 2.0 mA
– maximum standby current 10 µA (at 6.0 V),
typical 4 µA
• Non-volatile storage of 2-Kbits organized as 256 × 8-bits
• Single supply with full operation down to 2.5 V
• On-chip voltage multiplier
• Serial input/output I
2
C-bus
• Write operations
– byte write mode
– 8-byte page write mode
(minimizes total write time per byte)
• Read operations
– sequential read
– random read
• Internal timer for writing (no external components)
• Power-on reset
• High reliability by using a redundant storage code
• Endurance
– >500 k E/W-cycles at T
amb
= 22 °C
• 40 years non-volatile data retention time (typ.)
• Pin and address compatible to
– PCX8570, PCF8571, PCF8572 and PCF8581
– PCX8494X-2, PCX8598X-2 -Family.
DESCRIPTION
The PCX8582X-2 is a 2-Kbit (256 × 8-bit) floating gate
electrically erasable programmable read only memory
(EEPROM). By using an internal redundant storage code
it is fault tolerant to single bit errors. This feature
dramatically increases reliability compared to conventional
EEPROM memories.
Power consumption is low due to the full CMOS
technology used. The programming voltage is generated
on-chip, using a voltage multiplier.
As data bytes are received and transmitted via the serial
I
2
C-bus, a package using eight pins is sufficient. Up to
eight PCX8582X-2 devices may be connected to the
I
2
C-bus. Chip select is accomplished by three address
inputs (A0, A1, A2).
Timing of the ERASE/WRITE cycle is carried out
internally, thus no external components are required. Pin 7
(PTC) must be connected to either V
DD
or left open-circuit.
There is an option of using an external clock for timing the
length of an ERASE/WRITE cycle.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DD
supply voltage 2.5 6.0 V
I
DDR
supply current READ f
SCL
= 100 kHz
V
DD
= 3 V − 60 µA
V
DD
= 6 V − 200 µA
I
DDW
supply current ERASE/WRITE f
SCL
= 100 kHz
V
DD
= 3 V − 0.6 mA
V
DD
= 6 V − 2.0 mA
I
DDSB
supply current STANDBY V
DD
= 3 V − 3.5 µA
V
DD
= 6 V − 10 µA
