Microsemi Corp JANS1N5811US

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Item Description: ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Waffle Pack

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Microsemi Corp 9424
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
VOIDLESS - HERMETICALLY- SEALED
ULTRAFAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
T4-LDS-0168 Rev. 2 (111089) Page 1 of 7
DEVICES LEVELS
Leaded 1N5807 1N5809 1N5811
JAN
Surface Mount 1N5807US 1N5809US 1N5811US
JANTX
1N5807URS 1N5809URS 1N5811URS
JANTXV
JANS
DESCRIPTION
B-Body
Leaded Package
B-Body
Surface Mount
MELF PACKAGE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are available in both leaded and surface mount MELF package
configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
Popular JEDEC registered 1N5807, 1N5809, 1N5811
Voidless hermetically sealed glass package
Extremely robust construction
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/477
Surface mount versions available in a square end-cap MELF configuration with “US”
suffix
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Bussiness Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0168 Rev. 2 (111089) Page 2 of 7
APPLICATIONS / BENEFITS
Ultrafast recovery 6 Amp rectifier series 50 to 150V
Military Space and other high-reliability applications
Switching power supplies or other applications requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 6 A @ T
L
= 75ºC at 3/8 inch lead length (see note 1)
Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Ni plate over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Bussiness Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0168 Rev. 2 (111089) Page 3 of 7
ELECTRICAL CHARACTERISTICS @ T
A
= 25°C
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100A
V
BR
AVERAGE
RECTIFIED
CURRENT
I
O1
@T
L
=75ºC
(Note 1)
AVERAGE
RECTIFIED
CURRENT
I
O2
@T
A
=-65ºC
Note 2
MAXIMUM
FORWARD
VOLTAGE
@ 4A
(8.3 ms pulse)
V
F
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
VOLTS VOLTS AMPS VOLTS
A
AMPS ns
25
o
C 125
o
C 25
o
C 125
o
C
1N5807, US, URS 50 60 6.0 3.0 0.875 0.800 5 525 125 30
1N5809, US, URS 100 110 6.0 3.0 0.875 0.800 5 525 125 30
1N5811, US, URS 150 160 6.0 3.0 0.875 0.800 5 525 125 30
NOTE 1: Leaded: Rated at T
L
= 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T
L
above 75ºC.
Surface mount: Rated at T
EC
= 75°C. Derate at 60 mA/ºC for T
EC
above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above T
A
= 55ºC. This rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC
NOTE 3: T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= 0.10 A and di/dt = 100 A/µs min
SYMBOLS & DEFINITIONS
Symbol Definition
V
BR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
V
RWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
V
F
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
I
R
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a
peak reverse current is reached.
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