Microsemi Corp JANS1N5806US

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Item Description: Diode Switching 150V 2.5A 2-Pin A-MELF T/R - Waffle Pack

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Microsemi Corp 0450
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
SCOTTSDALE DIVISION
1N5802 thru 1N5806
WWW.
Microsemi
. COM
1N5802 – 1N5806
DESCRIPTION
APPEARANCE
This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-
19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. They are also
available in surface-mount packages (see separate data sheet for 1N5802US thru
1N5806US). Microsemi also offers numerous other rectifier products to meet higher
and lower current ratings with various recovery time speed requirements including
standard, fast and ultrafast in both through-hole and surface-mount packages.
“A” Package
IMPORTANT: For the most current data, consult
MICROSEMI’s
website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N5802 to 1N5806 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 2.5 A @ T
L
= 75ºC
Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Forward Surge Current: 35 Amps @ 8.3 ms half-sine
Capacitance: 25 pF @ V
R
= 10 Volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µ
A
V
BR
AVERAGE
RECTIFIED
CURRENT
I
O1
@
T
L
=+75ºC
(NOTE 1)
AVERAGE
RECTIFIED
CURRENT
I
O2
@
T
A
=+55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
V
F
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
VOLTS VOLTS AMPS AMPS VOLTS
µ
A
AMPS ns
25
o
C 100
o
C 25
o
C 100
o
C
1N5802
1N5803
1N5804
1N5805
1N5806
50
75
100
125
150
55
80
110
135
160
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.875
0.875
0.800
0.800
0.800
1
1
1
1
1
50
50
50
50
50
35
35
35
35
35
25
25
25
25
25
NOTE 1: I
O1
is rated at 2.5 A @ T
L
= 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for T
L
above 75ºC.
NOTE 2: I
O2
is rated at 1.0 A @ T
A
= 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC. Derate at 8.33 mA/ºC for T
A
above 55ºC.
NOTE 3: T
A
= 25
o
C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
7-16-2004 REV A
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2004
7-16-2004 REV A
WWW.
Microsemi
. COM
SCOTTSDALE DIVISION
1N5802 thru 1N5806
1N5802 – 1N5806
SYMBOLS & DEFINITIONS
Symbol Definition
V
BR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
V
RWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
I
O
Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
V
F
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
I
R
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
OUTPUT CURRENT vs. LEAD TEMP.
PACKAGE DIMENSIONS inches/[mm]
NOTE: Lead tolerance = +0.002/-0.003 inches

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