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HSMS-2822-BLKG

Part # HSMS-2822-BLKG
Description SCHOTTKY 15V 3PIN SOT-23 - Rail/Tube
Category DIODE
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-282x Series
Features
Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time)
Rate*
Six-sigma Quality Level
Single, Dual and Quad
Versions
Unique Configurations in
Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
HSMS-282K Grounded
Center Leads Provide up to
10 dB Higher Isolation
Matched Diodes for
Consistent Performance
Better Thermal Conductivity
for Higher Power Dissipation
Lead-free Option Available
* For more information see the
Surface Mount Schottky
Reliability Data Sheet.
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
COMMON
CATHODE
#4
UNCONNECTED
PAIR
#5
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
12
3
12
34
RING
QUAD
#7
12
34
BRIDGE
QUAD
#8
12
34
CROSS-OVER
QUAD
#9
12
34
12
3
12
3
12
3
Package Lead Code Iden-
tification, SOT-323
(Top View)
Package Lead Code Iden-
tification, SOT-363
(Top View)
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
COMMON
CATHODE QUAD
M
UNCONNECTED
TRIO
L
BRIDGE
QUAD
P
COMMON
ANODE QUAD
N
RING
QUAD
R
123
654
HIGH ISOLATION
UNCONNECTED PAIR
K
123
654
123
654
123
654
123
654
123
654
and wave shaping. The
HSMS-282x series of diodes is the
best all-around choice for most
applications, featuring low series
resistance, low forward voltage at
all current levels and good RF
characteristics.
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
2
Electrical Specifications T
C
= 25°C, Single Diode
[4]
Maximum Maximum
Minimum Maximum Forward Reverse Typical
Part Package Breakdown Forward Voltage Leakage Maximum Dynamic
Number Marking Lead Voltage Voltage V
F
(V) @ I
R
(nA) @ Capacitance Resistance
HSMS
[5]
Code Code Configuration V
BR
(V) V
F
(mV) I
F
(mA) V
R
(V) C
T
(pF) R
D
(
)
[6]
2820 C0
[3]
0 Single 15 340 0.5 10 100 1 1.0 12
2822 C2
[3]
2 Series
2823 C3
[3]
3 Common Anode
2824 C4
[3]
4 Common Cathode
2825 C5
[3]
5 Unconnected Pair
2827 C7
[3]
7 Ring Quad
[5]
2828 C8
[3]
8 Bridge Quad
[5]
2829 C9
[3]
9 Cross-over Quad
282B C0
[7]
B Single
282C C2
[7]
C Series
282E C3
[7]
E Common Anode
282F C4
[7]
F Common Cathode
282K CK
[7]
K High Isolation
Unconnected Pair
282L CL
[7]
L Unconnected Trio
282M HH
[7]
M Common Cathode Quad
282N NN
[7]
N Common Anode Quad
282P CP
[7]
P Bridge Quad
282R OO
[7]
R Ring Quad
Test Conditions I
R
= 100 µAI
F
= 1 mA
[1]
V
F
= 0 V I
F
= 5 mA
f = 1 MHz
[2]
Notes:
1. V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled Quad Capacitance.
6. R
D
= R
S
+ 5.2 at 25°C and I
f
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363
I
f
Forward Current (1 µs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V 15 15
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C -65 to 150 -65 to 150
θ
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
Notes:
1. Package marking provides
orientation and identification.
2. See Electrical Specifications for
appropriate package marking.
Pin Connections and
Package Marking
GUx
1
2
3
6
5
4
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as CM, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1 1 1
–– + –– + ––
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter Units HSMS-282x
B
V
V15
C
J0
pF 0.7
E
G
eV 0.69
I
BV
A1E-4
I
S
A 2.2E -8
N 1.08
R
S
6.0
P
B
V 0.65
P
T
2
M 0.5
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model
Diode Chip
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
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