CEP18N5/CEB18N5

CEF18N5

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low R

DS(ON)

.

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS T

c

= 25 C unless otherwise noted

Parameter Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed

a

Maximum Power Dissipation @ T

C

= 25 C

- Derate above 25 C

V

DS

V

GS

P

D

I

DM

e

500

1.8

219

72

11

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type V

DSS

R

DS(ON)

I

D

@V

GS

CEP18N5

CEF18N5

500V

0.27Ω

18A

d

10V

0.6

74

72

d

11

d

CEB18N5 500V 18A 10V

TO-220/263 TO-220F

PRELIMINARY

http://www.cetsemi.com

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2013.Jan.

0.27Ω

Drain Current-Continuous

I

D

A

@ T

C

= 100 C

@ T

C

= 25 C

18

d

Lead-free plating ; RoHS compliant.

Single Pulsed Avalanche Energy

e

Single Pulsed Avalanche Current

e

E

AS

I

AS

859

18

mJ

A

Operating and Store Temperature Range T

J

,T

stg

-55 to 150 C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter Symbol Limit Units

C/W

62.5

0.57RθJC

RθJA

1.7

65

Electrical Characteristics T

c

= 25 C unless otherwise noted

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BV

DSS

I

DSS

IGSSR

I

GSSF

0.270.22

3 5

-100

100

1

Ω

V

nA

µA

V

2

Gate Body Leakage Current, Reverse

On Characteristics

b

Dynamic Characteristics

c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

b

Test Condition

V

GS

= 0V, I

D

= 250µA

V

GS(th)

R

DS(on)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

I

S

f

V

SD

g

Typ Max

500

V

DS

=500V, V

GS

= 0V

V

GS

= 30V, V

DS

= 0V

V

GS

= -30V, V

DS

= 0V

V

GS

= V

DS

, I

D

= 250µA

V

GS

= 10V, I

D

= 9A

V

DD

= 250V, I

D

=18A,

V

GS

= 10V, R

GEN

= 25Ω

V

DS

= 400V,I

D

= 18A,

V

GS

= 10V

V

DS

= 25V, V

GS

= 0V,

f = 1.0 MHz

V

GS

= 0V, I

S

= 18A

3035

305

5

56

28

110

20

51

19

13

18

1.4

pF

ns

nC

A

V

CEP18N5/CEB18N5

CEF18N5

e.L = 5.3mH, I

AS

=18A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25 C

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package I

S(max)

=10A .

g.Full package V

SD

test condition I

S

=10A .

3

C, Capacitance (pF)

ID, Drain Current (A)

RDS(ON), Normalized

RDS(ON), On-Resistance(Ohms)

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.6

2.2

1.8

1.4

1.0

0.6

0.2

V

GS

=10V

I

D

=9A

-100 -50 0 50 100 150 200

VTH, Normalized

Gate-Source Threshold Voltage

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

IS, Source-drain current (A)

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

C

rss

3900

3250

2600

1950

1300

650

0

0 5 10 15 20 25

C

iss

C

oss

24

16

8

0

0 2 4 6

32

8 10

T

J

=125 C

-55 C

25 C

20

16

12

8

4

0

0 5 10 2015

24

25 30

V

GS

=6V

V

GS

=5V

V

GS

=10,9,8,7V

0.4 0.6 0.8 1.0

10

0

10

-1

10

1

1.2 1.61.4

V

GS

=0

V

CEP18N5/CEB18N5

CEF18N5

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS

=V

GS

I

D

=250µA

-50 -25 0 25 50 75 100 125 150

175

Part #	CEP-18
Description	CAP, CONDUCTIVE , BLACKPLUG THREAD CONN 1-1/8-18
Category	COVER
Availability	In Stock
Qty	249

Qty	Price
1 - 52	$0.21813
53 - 104	$0.17351
105 - 156	$0.16360
157 - 209	$0.15203
210 +	$0.13551

CEP-18

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Technical Document