TC554161AFT-70,-85,-10,-70L,-85L,-10L

2001-08-17 1/10

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

262,144-WORD BY 16-BIT STATIC RAM

DESCRIPTION

The TC554161AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10%

power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10

mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 mA standby

current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to select the device

and for data retention control, and output enable (

OE ) provides fast memory access. Data byte control pin ( LB ,

UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications

where high speed, low power and battery backup are required. The TC554161AFT is available in a plastic 54-pin

thin-small-outline package (TSOP).

FEATURES

· Low-power dissipation

Operating: 55 mW/MHz (typical)

· Single power supply voltage of 5 V ± 10%

· Power down features using

CE .

· Data retention supply voltage of 2 to 5.5 V

· Direct TTL compatibility for all inputs and outputs

· Standby Current (maximum):

TC554161AFT

-70,-85,-10 -70L,-85L,-10L

5.5 V 100 mA 50 mA

3.0 V 50 mA 25 mA

PIN ASSIGNMENT

(TOP VIEW)

PIN NAMES

A0~A17 Address Inputs

I/O1~I/O16 Data Inputs/Outputs

CE Chip Enable

R/W Read/Write Control

OE Output Enable

LB , UB Data Byte Control

Power (+5 V)

GND Ground

NC No Connection

OP* Option

*: OP pin must be open of connected to GND.

· Access Times (maximum):

TC554161AFT

-70,-70L -85,-85L -10,-10L

Access Time 70 ns 85 ns 100 ns

CE Access Time 70 ns 85 ns 100 ns

OE Access Time 35 ns 45 ns 50 ns

· Package:

TSOP II54-P-400-0.80 (AFT) (Weight: 0.57 g typ)

I/O16

I/O15

GND

I/O14

I/O13

R/W

I/O12

I/O11

GND

I/O10

I/O9

A17

A16

A15

A14

A13

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

GND

I/O7

I/O8

1 54

2 53

3 52

4 51

5 50

6 49

7 48

8 47

9 46

10 45

11 44

12 43

13 42

14 41

15 40

16 39

17 38

18 37

19 36

20 35

21 34

22 33

23 32

24 31

25 30

26 29

27 28

CE OE

(Normal pinout)

TC554161AFT-70,-85,-10,-70L,-85L,-10L

2001-08-17 2/10

BLOCK DIAGRAM

MAXIMUM RATINGS

SYMBOL RATING VALUE UNIT

Power Supply Voltage -0.3~7.0 V

Input Voltage -0.3*~7.0 V

I/O

Input/Output Voltage -0.5~V

+ 0.5 V

Power Dissipation 0.6 W

solder

Soldering Temperature (10s) 260 °C

stg

Storage Temperature -55~150 °C

opr

Operating Temperature 0~70 °C

*: -3.0 V when measured at a pulse width of 30ns

I/O1

GND

I/O8

CLOCK

GENERATOR

I/O9

I/O16

A5 A6 A7 A8 A9A10

DATA

OUTPUT

BUFFER

DATA

OUTPUT

BUFFER

DATA

INPUT

BUFFER

DATA

INPUT

BUFFER

A11

A12

A13

A14

A15

A16

A17

R/W

MEMORY CELL ARRAY

2,048

´ 128 ´ 16

(4,194,304)

COLUMN ADDRESS

DECODER

SENSE AMP

COLUMN ADDERSS

COLUMN ADDRESS

BUFFER

ROW ADDRESS

DECODER

ROW ADDRESS

BUFFER

ROW ADDRESS

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

TC554161AFT-70,-85,-10,-70L,-85L,-10L

2001-08-17 3/10

DC RECOMMENDED OPERATING CONDITIONS

(Ta =

= 0° to 70°C)

SYMBOL PARAMETER

MIN TYP MAX UNIT

Power Supply Voltage 4.5 5.0 5.5 V

Input High Voltage 2.2 ¾ V

+ 0.3 V

Input Low Voltage -0.3* ¾ 0.8 V

Data Retention Supply Voltage 2.0 ¾ 5.5 V

*: -3.0 V when measured at a pulse width of 30 ns

DC CHARACTERISTICS

(Ta =

= 0° to 70°C, V

= 5 V ±

±±

± 10%)

SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT

Input Leakage

Current

= 0 V~V

¾ ¾ ±1.0 mA

Output Leakage

Current

CE = V

or R/W = V

or OE = V

, V

OUT

= 0 V~V

¾ ¾ ±1.0 mA

Output High Current V

= 2.4 V -1.0 ¾ ¾ mA

Output Low Current V

= 0.4 V 2.1 ¾ ¾ mA

cycle

= 70 ns ¾ ¾ 110

cycle

= 85 ns, 100 ns ¾ ¾ 100

DDO1

CE = V

and R/W = V

OUT

= 0 mA,

Other Input

= V

cycle

= 1 ms ¾ 15 ¾

cycle

= 70 ns ¾ ¾ 100

cycle

= 85 ns, 100 ns ¾ ¾ 90

DDO2

Operating Current

CE = 0.2 V and R/W = V

- 0.2 V,

OUT

= 0 mA,

Other Input

= V

- 0.2 V/0.2 V

cycle

= 1 ms ¾ 10 ¾

DDS1

CE = V

¾ ¾ 3 mA

Ta = 25°C ¾ 2 ¾

-70,-85,-10

= 0~70°C ¾ ¾ 100

Ta = 25°C ¾ 2 5

DDS2

Standby Current

CE = V

- 0.2 V,

= 2.0 V~5.5 V

-70L,-85L,-10L

= 0~70°C ¾ ¾ 50

CAPACITANCE

(Ta =

= 25°C, f =

= 1 MHz)

SYMBOL PARAMETER TEST CONDITION MAX UNIT

Input Capacitance V

= GND 10 pF

OUT

Output Capacitance V

OUT

= GND 10 pF

Note: This parameter is periodically sampled and is not 100% tested.

Part #	55416-1
Description
Category	CONNECTOR
Availability	In Stock
Qty	2

55416-1

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Technical Document