Elektronische Bauelemente
BCP882H
3A , 70 V
NPN Plastic-Encapsulate Transistor
23-Aug-2017 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
High DC Current Gain
Low V
CE(sat)
MARKING
CLASSIFICATION OF h
FE
Rank
BCP882H-Y
Range
160~320
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
70 V
Collector to Emitter Voltage V
CEO
70 V
Emitter to Base Voltage V
EBO
6 V
Continuous Collector Current I
C
3 A
Collector Power Dissipation P
C
500 mW
Thermal Resistance Junction to Ambient
R
θJA
250 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min Typ Max
Unit
Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
70 - - V I
C
=100µA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
70 - - V I
C
=10mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
6 - - V I
E
=100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - 1 µA V
CB
=40V, I
E
=0
Collector cut-off current I
CEO
- - 10 µA V
CE
=30V, I
B
=0
Emitter Cut-Off Current I
EBO
- - 1 µA V
EB
=6V, I
C
=0
DC Current Gain h
FE
160 - 320 V
CE
=2V, I
C
=1A
Collector to Emitter Saturation Voltage
V
CE(sat)
- - 0.5 V I
C
=2A, I
B
=0.2A
Base to emitter Saturation Voltage V
BE(sat)
- - 1.5 V I
C
=2A, I
B
=0.2A
Transition Frequency f
T
- 50 - MHz
V
CE
=5V, I
C
=0.1A, f=10MHz
SOT-89
D882H
1. Base
2. Collector
3. Emitter
