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GRM31CR71H225KA88L

Part # GRM31CR71H225KA88L
Description CAP 2.2UF 50VDC X7R 10% SMD 1206 - Cut TR (SOS)
Category CHIP RESISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $0.12340

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

10
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
Z1, Z20 0.034″×0.060″ Microstrip
Z2* 0.034″×0.380″ Microstrip
Z3* 0.034″×0.215″ Microstrip
Z4 0.034″×0.054″ Microstrip
Z5, Z6 0.266″×0.025″ Microstrip
Z7, Z9 0.266″×0.080″ Microstrip
Z8 0.034″×0.050″ Microstrip
Z10 0.266″×0.015″ Microstrip
Z11, Z12 0.390″×0.120″ Microstrip
Z13 0.390″×0.080″ Microstrip
Z14 0.034″×0.100″ Microstrip
Z15 0.390″×0.200″ Microstrip
Z16 0.034″×0.110″ Microstrip
Z17 0.034″×0.010″ Microstrip
Z18* 0.034″×0.190″ Microstrip
Z19* 0.034″×0.110″ Microstrip
* Line length includes microstrip bends
Figure 11. AFT09MS031NR1 Broadband Reference Circuit Schematic — 760--870 MHz
Table 11. AFT09MS031NR1 Broadband Reference Circuit Microstrips — 760--870 MHz
DescriptionMicrostripDescriptionMicrostrip
RF
INPUT
RF
OUTPUT
Z2
Z3
Z10
L1
V
DS
C14 C15
C11
Z4
C2
Z5 Z6
C3
Z7
C4 C5
C9
Z12
L2
C16
Z14
C8
Z15
Z16 Z17
Z18
Z19
C10
Z1
Z11
C12
Z8
V
GS
C17
Z9
C6
C7
Z13
Z20
C1
C13
AFT09MS031NR1 AFT09MS031GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND
REFERENCE CIRCUIT
750
G
ps
f, FREQUENCY (MHz)
Figure 12. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
14
17
16.5
30
66
63
57
40
35
η
D
, DRAIN
EFFICIENCY (%)
η
D
G
ps
, POWER GAIN (dB)
16
15.5
15
14.5
770 790 810 830 850 870 890
60
P
out
,OUTPUT
POWER (WATTS)
V
DD
= 13.6 Vdc, P
in
=1W
I
DQ
= 100 mA
P
out
750
G
ps
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
14
17
16.5
27
66
64
60
37
32
η
D
, DRAIN
EFFICIENCY (%)
η
D
G
ps
, POWER GAIN (dB)
16
15.5
15
14.5
770 790 810 830 850 870 890
62
P
out
,OUTPUT
POWER (WATTS)
V
DD
= 12.5 Vdc, P
in
=1W
I
DQ
= 100 mA
P
out
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND
REFERENCE CIRCUIT
0
0
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. CW Output Power versus Gate--Source Voltage
60
1
2
345
40
10
30
20
P
out
, OUTPUT POWER (WATTS)
f = 820 MHz
V
DD
= 13.6 Vdc, P
in
=1W
V
DD
= 13.6 Vdc, P
in
=0.5W
V
DD
= 12.5 Vdc
P
in
=0.5W
Detail A
Figure 15. Power Gain, CW Output Power and
Drain Efficiency versus Input Power and
Frequency
P
in
, INPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
12
15
14
0.03 2
18
17
16
0.1
820 MHz
V
DD
= 13.6 Vdc
I
DQ
= 100 mA
1
G
ps
η
D
, DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (WATTS)
50
V
DD
= 12.5 Vdc, P
in
=1W
13
870 MHz
760 MHz
870 MHz
820 MHz
760 MHz
760 MHz
820 MHz
870 MHz
30
50
40
10
20
60
70
40
0
20
60
120
80
100
η
D
P
out
0
0
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
5
0.4
0.8
1.2 1.6 2
3
2
1
P
out
, OUTPUT POWER (WATTS)
4
Detail A
f = 820 MHz
V
DD
= 13.6 Vdc
P
in
=1W
V
DD
= 12.5 Vdc
P
in
=1W
V
DD
= 12.5 Vdc
P
in
=0.5W
V
DD
= 13.6 Vdc
P
in
=0.5W
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