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GRM31CR71H225KA88L

Part # GRM31CR71H225KA88L
Description CAP 2.2UF 50VDC X7R 10% SMD 1206 - Cut TR (SOS)
Category CHIP RESISTOR
Availability Out of Stock
Qty 0
Qty Price
1 + $0.12340

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

AFT09MS031NR1 AFT09MS031GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
P
out
, OUTPUT POWER (WATTS)
0
0
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. C W Output Power versus Gate--Source Voltage
25
0.5 1 1.5 2 2.5 3 4
20
5
15
10
30
P
out
, OUTPUT POWER (WATTS)
4.5
P
in
, INPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
15
16
15.5
0.01 2
η
D
G
ps
30
50
40
10
20
17.5
17
16.5
18
60
70
80
0.1
η
D
, DRAIN EFFICIENCY (%)
P
out
V
DD
= 13.6 Vdc, I
DQ
= 500 mA
f = 870 MHz
1
V
DD
= 12.5 Vdc
P
in
=0.3W
18.5
19
0
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
V
DD
= 13.6 Vdc, P
in
=0.3W
V
DD
= 12.5 Vdc, P
in
=0.6W
V
DD
= 13.6 Vdc, P
in
=0.6W
35
40
45
f = 870 MHz
V
DD
= 13.6 Vdc, I
DQ
= 500 mA, P
out
=31WAvg.
f
MHz
Z
source
Ω
Z
load
Ω
870 0.28 -- j0.71 0.98 -- j0.52
Z
source
= Test c ircuit impedance as measured from
gate to ground.
Z
load
= Test c ircuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z
source
Z
load
50 Ω
50 Ω
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
760--870 MHz BROADBAND REFERENCE CIRCUIT, 50 OHM SYSTEM
Table 8. 760--870 MHz B roadband Performance (13.6 Vdc, I
DQ
= 100 mA, T
A
=25°C, CW)
Frequency
(MHz)
G
ps
(dB)
η
D
(%)
P1dB
(W)
760 15.7 62.0 44
820 15.7 63.0 37
870 15.5 61.0 36
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
VSWR
P
out
(W) Test Voltage, V
DD
Result
870 CW >65:1 at all
Phase Angles
64
(3 dB Overdrive)
17 No Device
Degradation
AFT09MS031NR1 AFT09MS031GNR1
9
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz BROADBAND REFERENCE CIRCUIT
Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz
C1
L1
C2
L2
C4
C5
C3
C13
C15
C14
C9
C12
C11
C10
C7
J1
C6
T O -- 2 7 0 -- 2
Rev. 1
C17
C8
C16
Q1
T able 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and V alues — 760--870 MHz
Part Description Part Number Manufacturer
C1, C10, C11, C12 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC
C2 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC
C3 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C4 12 pF Chip Capacitor ATC600F120JT250XT ATC
C5 10 pF Chip Capacitor ATC600F100JT250XT ATC
C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC
C8, C9 22 pF Chip Capacitors ATC600F220JT250XT ATC
C13, C16 240 pF Chip Capacitors ATC600F241JT250XT ATC
C14 0.10 μF Chip Capacitor GRM21BR71H104KA01B Murata
C15 0.01 μF Chip Capacitor GRM21BR72A103KA01B Murata
C17 22 pF Chip Capacitor ATC100A220JT150XT ATC
L1 6.8 nH Inductor 0805WL6R8KT ATC
L2 17 nH Inductor 0908SQ17NJLC Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS031NR1 Freescale
J1 3Pin AMP--9--146305--0 TE Connectivity
PCB 0.020″, ε
r
=4.8 S1000--2, FR4 Shengyi
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