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ERJ-3EKF1000V

Part # ERJ-3EKF1000V
Description RES THKFLM 0603 100 OHM 1% 1/10W 100PPM/ C SMD - Cut TR (S
Category CHIP RESISTOR
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

- 16 -`
AUGUST08,2012|DATASHEET| Rev3.1
16
IR3894
12AHighlyIntegratedSupIRBuck
SingleInputVoltage,SynchronousBuckRegulator
PD97745
TYPICALOPERATINGCHARACTERISTICS(40°CTO+125°C)
Note:SeeOverCurrentprotectionsectionNote:SeeOverCurrentProtectionsection
- 17 -`
AUGUST08,2012|DATASHEET| Rev3.1
17
IR3894
12AHighlyIntegratedSupIRBuck
SingleInputVoltage,SynchronousBuckRegulator
PD97745
THEORYOFOPERATION
DESCRIPTION
TheIR3894usesaPWMvoltagemodecontrolschemewith
externalcompensationtoprovidegoodnoiseimmunity
andmaximumflexibilityinselectinginductorvaluesand
capacitortypes.
Theswitchingfrequencyisprogrammablefrom300KHz
to1.5MHzandprovidesthecapabilityofoptimizingthe
designintermsofsizeandperformance.
IR3894providespreciselyregulatedoutputvoltage
programmedviatwoexternalresistorsfrom0.5Vto
0.86*Vin.
TheIR3894operateswithaninternalbiassupply(LDO)
whichisconnectedtotheVcc/LDO_outpin.Thisallows
operationwithsinglesupply.Thebiasvoltageisvariable
accordingtoloadcondition.Iftheoutputload
currentis
lessthanhalfofthepeaktopeakinductorcurrent,alower
biasvoltage,4.4V,isusedastheinternalgatedrive
voltage;otherwise,ahighervoltage,6.4V,isused.
Thisfeaturehelpstheconvertertoreducepowerlosses.
TheICcanalsobeoperatedwithanexternalsupply
from
4.5to7.5V,allowinganextendedoperatinginputvoltage
(PVin)rangefrom1.0Vto21V.ForusingtheinternalLDO
supply,theVinpinshouldbeconnectedtoPVinpin.
Ifanexternalsupplyisused,itshouldbeconnectedto
Vcc/LDO_outpinandtheVinpinshouldbe
shortedto
Vcc/LDO_outpin.
Thedeviceutilizestheonresistanceofthelowside
MOSFET(syncFET)fortheovercurrentprotection.This
methodenhancestheconverter’sefficiencyandreduces
costbyeliminatingtheneedforexternalcurrentsense
resistor.
IR3894includestwolowR
ds(on)
MOSFETsusingIR’sHEXFET
technology.Thesearespecificallydesignedforhigh
efficiencyapplications.
UNDERVOLTAGELOCKOUTANDPOR
Theundervoltagelockoutcircuitmonitorsthevoltageof
Vcc/LdopinandtheEnableinput.Itassuresthatthe
MOSFETdriveroutputsremainintheoffstatewhenever
eitherofthesetwosignalsdropbelowthesetthresholds.
NormaloperationresumesonceVcc/LDO_OutandEnable
riseabovetheirthresholds.
ThePOR
(PowerOnReady)signalisgeneratedwhenall
thesesignalsreachthevalidlogiclevel(seesystemblock
diagram).WhenthePORisassertedthesoftstart
sequencestarts(seesoftstartsection).
ENABLE
TheEnablefeaturesanotherlevelofflexibilityforstartup.
TheEnablehasprecisethresholdwhichisinternally
monitoredbyUnderVoltageLockout(UVLO)circuit.
Therefore,theIR3894willturnononlywhenthevoltage
attheEnablepinexceedsthisthreshold,typically,1.2V.
IftheinputtotheEnablepin
isderivedfromthebus
voltagebyasuitablyprogrammedresistivedivider,itcan
beensuredthattheIR3894doesnotturnonuntilthebus
voltagereachesthedesiredlevel(Fig.4).Onlyafterthebus
voltagereachesorexceedsthislevelandvoltageatthe
Enablepinexceeds
itsthreshold,IR3894willbeenabled.
Therefore,inadditiontobeingalogicinputpintoenable
theIR3894,theEnablefeature,withitsprecisethreshold,
alsoallowstheusertoimplementanUnderVoltage
Lockoutforthebusvoltage(PVin).Thisisdesirable
particularlyforhighoutputvoltageapplications,where
we
mightwanttheIR3894tobedisabledatleastuntilPVIN
exceedsthedesiredoutputvoltagelevel.
Pvin (12V)
Vcc
Enable
Intl_SS
10. 2 V
Enable Threshold = 1.2V
Figure4:NormalStartup,deviceturnson
whenthebusvoltagereaches10.2V
AresistordividerisusedatENpinfromPVintoturnonthe
deviceat10.2V.
- 18 -`
AUGUST08,2012|DATASHEET| Rev3.1
18
IR3894
12AHighlyIntegratedSupIRBuck
SingleInputVoltage,SynchronousBuckRegulator
PD97745
Pvin(12V)
Vcc
Intl_SS
Enable >1.2V
Vp>1V
Figure5a:RecommendedstartupforNormaloperation
Pvin (12V)
Vcc
Enable > 1. 2 V
Intl_SS
Vp
Figure5b:Recommendedstartupforsequencingoperation
(ratiometricorsimultaneous)
Pvin (12V)
Vcc
Enable > 1. 2 V
Intl_SS
Vp
Vref=0
Figure5c:Recommendedstartupfor
memorytrackingoperation(VttDDR)
Figure5ashowstherecommendedstartupsequencefor
thenormal(nontracking,nonsequencing)operationof
IR3894,whenEnableisusedasalogicinput.Figure5b
showstherecommendedstartupsequenceforsequenced
operationofIR3894withEnableusedaslogicinput.Figure
5cshowstherecommendedstartupsequence
fortracking
operationofIR3894withEnableusedaslogicinput.
Innormalandsequencingmodeoperation,Vrefisleft
floating.A1nFceramiccapacitorisrecommended
betweenthispinandGnd.Intrackingmodeoperation,
VrefshouldbetiedtoGnd.
ItisrecommendedtoapplytheEnablesignal
aftertheVCC
voltagehasbeenestablished.IftheEnablesignalispresent
beforeVCC,a50kΩresistorcanbeusedinserieswiththe
EnablepintolimitthecurrentflowingintotheEnablepin.
PREBIASSTARTUP
IR3894isabletostartupintoprechargedoutput,which
preventsoscillationanddisturbancesoftheoutput
voltage.
Theoutputstartsinasynchronousfashionandkeepsthe
synchronousMOSFET(SyncFET)offuntilthefirstgate
signalforcontrolMOSFET(CtrlFET)isgenerated.Figure6a
showsatypicalPre
Biasconditionatstartup.ThesyncFET
alwaysstartswithanarrowpulsewidth(12.5%ofa
switchingperiod)andgraduallyincreasesitsdutycycle
withastepof12.5%untilitreachesthesteadystatevalue.
Thenumberofthesestartuppulsesforeachstepis16and
it’sinternallyprogrammed.Figure6bshowstheseriesof
16x8startuppulses.
Vo
[V]
[Time]
Pre-Bias
Voltage
Figure6a:PreBiasstartup
... ... ...
HDRv
... ... ...
16
End of
PB
LDRv
12.5% 25%
87.5%
16
...
...
...
...
Figure6b:PreBiasstartuppulses
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