ATC 100B-100-J-CA

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DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MW4IC001NR4 MW4IC001MR4
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
N Suffix Indicates Lead-Free Terminations
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
- 0.5, +65 Vdc
Gate-Source Voltage V
GS
- 0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
4.58
0.037
W
W/°C
Storage Temperature Range T
stg
- 65 to +150 °C
Operating Junction Temperature T
J
150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case @ 85°C R
θ
JC
27.3 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 0 (Minimum)
Machine Model M1 (Minimum)
Charge Device Model C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J -STD -020 3 260 °C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC001MR4
Rev. 3, 1/2005
Freescale Semiconductor
Technical Data
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001NR4
MW4IC001MR4
Freescale Semiconductor, Inc., 2005. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
10 µAdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
10 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50 µA)
V
GS(th)
2 3 5 Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 10 mA)
V
GS(Q)
2 3.7 5 Vdc
Drain- Source On- Voltage
(V
GS
= 10 V, I
D
= 0.05 A)
V
DS(on)
0.48 0.9 Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 0.1 A)
g
fs
0.05 S
Dynamic Characteristics
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
45 pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
0.62 pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
G
ps
13 dB
Two-Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
η
D
29 %
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IMD -28 dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IRL -18 dB
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 12 mA, f = 2170 MHz)
P1dB 0.85 W
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
G
ps
12 13 dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
η
D
35 38 %
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
IRL -10 -16 dB
MW4IC001NR4 MW4IC001MR4
3
RF Device Data
Freescale Semiconductor
R2
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Z9 0.062 x 0.044 to 0.615 Taper
Z10 0.082 x 0.615 Microstrip
Z11 0.075 x 0.044 Microstrip
Z12 0.625 x 0.044 Microstrip
Z13 1.375 x 0.044 Microstrip
PCB Rogers RO4350, 0.020, ε
r
= 3.5
Z1 1.331 x 0.044 Microstrip
Z2 0.126 x 0.076 Microstrip
Z3 0.065 x 0.175 Microstrip
Z4 0.065 x 0.195 Microstrip
Z5 0.680 x 0.145 Microstrip
Z6, Z7 1.915 x 0.055 Microstrip
Z8 0.120 x 0.141 Microstrip
RF
INPUT
Z1
V
GG
Z2
Z6
C4
Z3
RF
OUTPUT
C5
DUT
V
DD
Z9 Z11 Z13
Z7
Z5
C2
R1
C7
Z8 Z10
C8
+
Z12
C1
C9
L2
L1
C10
C3
C6
C11
C12
C13
Z4
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C6 0.1 µF, 100 V Chip Capacitors C1210C104K5RACTR Kemet
C2, C3, C5, C7 43 pF, 500 V Chip Capacitors 100B430JP500X ATC
C4 12 pF, 500 V Chip Capacitor 100B120JP500X ATC
C8 22 µF, 35 V Tantalum Chip Capacitor T491X226K035AS Kemet
C9 4.7 pF, 500 V Chip Capacitor 100B4R7CP500X ATC
C10, C11 0.6- 4.5 pF, 500 V Variable Capacitors 27271SL Johanson
C12 2.7 pF, 500 V Chip Capacitor 100B2R7CP500X ATC
C13 3.3 pF, 500 V Chip Capacitor 100B3R3CP500X ATC
L1 5.6 nH Chip Inductor 0805 Series AVX
L2 10 nH Chip Inductor 1008 Series ATC
R1
100 W Chip Resistor
CRCW12061001F100 Dale
R2
20 W Chip Resistor
CRCW120620R0F100 Dale
123456NEXT

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