ATC 100B270JP

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

!
Silicon MOSFET Technology
Operation from 24V to 50V
High Power Gain
Extreme Ruggedness
Internal Input and Output Matching
Excellent Thermal Stability
All Gold Bonding Scheme
Pb-free and RoHS Compliant
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.
The high power HVV1012- 50 device is an enhancement mode RF MOSFET power
transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The
high voltage MOSFET technology produces over 50W of pulsed output power while
offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical
device structure assures high reliability and ruggedness as the device is specified to
withstand a 20:1 VSWR at all phase angles under full rated output power.
Device Part Number: HVV1012- 50
Evaluation Kit Part Number: HVV1012- 50-EK
ORDERING INFORMATION
DESCRIPTION
TYPICAL PERFORMANCE
FEATURES
REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
Specifications are subject to change without notice.
MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL
(MHz) (V) (mA) (W) (dB) (%) (dB)
Class AB 1150 50 100 250 19.5 48 20:1
2
2
2
2
GE
PACKAGE
ELECTRICAL CHARACTERISTICS
PULSE CHARACTERISTICS
THERMAL CHARACTERISTICS
RUGGEDNESS PERFORMANCE
1
NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10%
point of the pulse with pulse width = 10μsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad-
band matched test xture.
2
NOTE: Amount of gate voltage required to attain nominal quiescent current.
Symbol Parameter Conditions Min Typical Max Unit
V
BR(DSS)
Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V
I
DSS
Drain Leakage Current VGS=0V,VDS=48V - 50 200 A
I
GSS
Gate Leakage Current VGS=5V,VDS=0V - 1 5 A
G
P
1
Power Gain F=1150MHz 17.5 19.5 - dB
IRL
1
Input Return Loss F=1150MHz - -7 -4 dB
D
1
F=1150MHz 46 48 - %
VGS(Q)
2
Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V
VTH Threshold Voltage VDD=5V, ID=300 A 0.7 1.2 1.7 V
Symbol Parameter Conditions Min Typical Max Unit
T
r
1
Rise Time F=1150MHz - <40 50 nS
T
f
1
Fall Time F=1150MHz - <15 50 nS
PD
1
Pulse Droop F=1150MHz - 0.25 0.5 dB
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