ATC 100B101JP500X

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ATC 8415
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

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ARCHIVE INFORMATION
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRFG35005MT1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
Typical W- CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
4.5 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
10.5
(2)
0.07
(2)
W
W/°C
Gate-Source Voltage V
GS
-5 Vdc
RF Input Power P
in
30 dBm
Storage Temperature Range T
stg
-65 to +150 °C
Channel Temperature
(1)
T
ch
175 °C
Operating Case Temperature Range T
C
-20 to +85 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case Class AB R
θ
JC
14.2
(2)
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J -STD-020 1 260 °C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Document Number: MRFG35005MT1
Rev. 3, 1/2006
Freescale Semiconductor
Technical Data
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
MRFG35005MT1
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Freescale Semiconductor, Inc., 2006. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRFG35005MT1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
I
DSS
1.7 Adc
Off State Leakage Current
(V
GS
= -0.4 Vdc, V
DS
= 0 Vdc)
I
GSS
< 1.0 100 µAdc
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= -2.5 Vdc)
I
DSO
600 µAdc
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= -2.5 Vdc)
I
DSX
< 1.0 9 mAdc
Gate-Source Cut- off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 8.7 mA)
V
GS(th)
-1.2 -0.9 -0.7 Vdc
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 80 mA)
V
GS(Q)
-1.1 -0.8 -0.6 Vdc
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
G
ps
10 11 dB
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
P
1dB
4.5 W
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 80 mA, P
out
= 450 mW Avg.,
f = 3.55 GHz)
h
D
22 25 %
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 450 mW Avg., I
DQ
= 80 mA,
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR -42 -39 dBc
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ARCHIVE INFORMATION
MRFG35005MT1
3
RF Device Data
Freescale Semiconductor
Z11 0.400 x 0.081Microstrip
Z12 0.120 x 0.408Microstrip
Z13 0.259 x 0.058Microstrip
Z14 0.269 x 0.348Microstrip
Z16 0.149 x 0.062Microstrip
Z17 0.553 x 0.044Microstrip
PCB Rogers 4350, 20 mil, ε
r
= 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Z1, Z18 0.125 x 0.044Microstrip
Z2 0.435 x 0.044Microstrip
Z3 0.298 x 0.254Microstrip
Z4 0.336 x 0.590Microstrip
Z5, Z15 0.527 x 0.015Microstrip
Z6, Z8, Z10 0.050 x 0.025Microstrip
Z7, Z9 0.125 x 0.025Microstrip
C11
RF
INPUT
RF
OUTPUT
R1
C10 C9 C8 C7 C6 C5
C16 C17 C18 C19 C20 C21 C22
C3 C4 C14 C15
Z5 Z15
C2 C12 C23
C25C27C29
C1 C24
Z1 Z2 Z3 Z4 Z10 Z11 Z12 Z13 Z14 Z16 Z17 Z18
V
DD
V
GS
C13
C26
Z9Z8Z6 Z7
C28
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C24 7.5 pF Chip Capacitors 100A7R5JP150X ATC
C2 0.4 pF Chip Capacitor (0805) 08051J0R4BBT AVX
C3, C4, C14, C15 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AVX
C5, C16 10 pF Chip Capacitors 100A100JP500X ATC
C6, C17 100 pF Chip Capacitors 100A101JP500X ATC
C7, C18 100 pF Chip Capacitors 100B101JP500X ATC
C8, C19 1000 pF Chip Capacitors 100B102JP500X ATC
C9, C20 3.9 µF Chip Capacitors ATC
C10, C21 0.1 µF Chip Capacitors ATC
C11, C22 22 µF, 35 V Tantalum Surface Mount Capacitors Newark
C12, C28 0.1 pF Chip Capacitors (0805) 08051J0R1BBT AVX
C13, C26, C27 0.3 pF Chip Capacitors (0805) 08051J0R3BBT AVX
C23 1.0 pF Chip Capacitor (0805) 08051J1R0BBT AVX
C25 1.2 pF Chip Capacitor (0805) 08051J1R2BBT AVX
C29 0.9 pF Chip Capacitor (0805) 08051J0R9BBT AVX
R1
100 W Chip Resistor
Newark
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