Avago Technologies ABA-32563-TR1G

Cross Number:

Item Description: RF Amp Chip Single GP 2.5GHz6-Pin SOT-363 T/R - Tape and

Qty Price
1 + $0.24890






Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Agilent ABA-32563
2.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Description
Agilent’s ABA-32563 is an
economical, easy-to-use, inter-
nally 50 matched, silicon
monolithic broadband amplifier
that offers excellent gain and
broadband response from DC to
2.5 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of
a SOT-143 package.
At 2 GHz, the ABA-32563 offers
a small-signal gain of 19 dB,
output P1dB of 8.4 dBm and
19.5 dBm output third order
intercept point. It is suitable for
use as wideband applications.
They are designed for low cost
gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communication systems.
ABA-32563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high f
T
and high NPN
breakdown (25 GHz f
T
at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Features
Operating Frequency DC ~ 2.5 GHz
19 dB Gain
VSWR < 2.0 throughout operating
frequency
8.4 dBm Output P1dB
19.5 dBm Output IP3
3.5 dB Noise Figure
Unconditionally Stable
Single 3V Supply (Id = 37 mA)
Lead-free
Applications
Amplifier for Cellular, Cordless,
Special Mobile Radio, PCS, ISM,
Wireless LAN, DBS, TVRO, and TV
Tuner Applications
Surface Mount Package
SOT-363/SC70
Pin Connections and
Package Marking
Simplified Schematic
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
Vcc
GND 3
2Kx
Input
GND 2
GND 1
Outpu
t
& Vcc
Vcc
Ground 2
Ground 1
Ground 3
RF
Input
RF
Output
& Vcc
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ABA-32563 Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25°C) V 6
P
in
CW RF Input Power (Vcc = 3V) dBm 15
P
diss
Total Power Dissipation
[3]
W 0.6
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 8.1 mW/°C for Tc
> 120.8°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50 , P
in
= -30 dBm, V
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
Gp
[1]
Power Gain (|S
21
|
2
) dB 17.5 19.0
Gp Power Gain Flatness, f = 0.1 ~ 1.5 GHz dB 1.0
f = 0.1 ~ 2.5 GHz 3.0
NF
[1]
Noise Figure dB 3.5 4.4
P1dB
[1]
Output Power at 1dB Gain Compression dBm 8.4
OIP3
[1]
Output Third Order Intercept Point dBm 19.5
VSWR
in
[1]
Input VSWR <1.5
VSWR
out
[1]
Output VSWR <1.5
Icc
[1]
Device Current mA 37 42.5
Td
[1]
Group Delay ps 140
Notes:
1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Figure 1. ABA-32563 Production Test Circuit.
Thermal Resistance
[2]
(Vcc = 3V)
θ
j-c
= 124.3°C/W
RF Outp
F
Input
Vcc
2Kx
C
bypass
100 pF
C
bypass
1000 pF
RFC
33 nH
C
block
1 nF
C
block
1 nF
3
ABA-32563 Typical Performance
T
c
= +25°C, Z
o
= 50, V
cc
= 3V unless stated otherwise.
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
22
20
18
16
14
12
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
GAIN (dB)
0
22
20
18
16
14
12
41
0.5
2 2.5 31.5
3.5
+85°C
+25°C
-40°C
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
NF (dB)
0
5
4.5
4
3.5
3
2.5
2
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
NF (dB)
0
5
4.5
4
3.5
3
2.5
2
41
0.5
2 2.5 31.5
3.5
+85°C
+25°C
-40°C
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
P1dB (dBm)
0
13
11
9
7
5
3
41
0.5
2 2.5 31.5
3.5
3.5V
3V
2.7V
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
P1dB (dBm)
0
13
11
9
7
5
3
41
0.5
2 2.5 31.5
3.5
+85°C
+25°C
-40°C
123NEXT

Freelance Electronics
13197 Sandoval Street
Santa Fe Springs, CA 90670

Hours of Operation
Monday-Friday 7:30am-4:30pm PST
(Deadline for next day shipment 2:00pm PST)

Trustworthy Standards Serving the Electronic Components
Industry since 1986

Government Cage code#-1V4R6
Duns Number# 788130532
Certified Small Disadvantaged Business