17.0-24.0 GHz GaAs MMIC
Power Amplifier
Page 1 of 6
Chip Device Layout
General Description
Mimix Broadband’s two stage 17.0-24.0 GHz GaAs MMIC
power amplifier is optimized for linear operation with a
third order intercept point of +36.0 dBm. The device also
includes Lange couplers to achieve good input/output
return loss and an on-chip temperature compensated output
power detector. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
VDC
Min.
17.0
-
-
-
-
-
-
+35.0
-
-1.0
-
-
Typ.
-
20.0
20.0
19.0
+/-1.0
40.0
+25.0
+36.0
+5.5
-0.5
430
0.28
Max.
24.0
-
-
-
-
-
-
-
+5.6
0.0
650
-
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6KΩ)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical)
Detector (diff) Output at 20 dBm
High Linearity Output Amplifier
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated
Output Power Detector
19.0 dB Small Signal Gain
+36.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
(1) Measured at +16 dBm per tone output carrier level at 22 GHz.
(2) Measured using constant current.
(3) Measured with either Vd5=I.0V or Vd5=5.5V and Rd=5.6KΩ.
+6.0 VDC
700 mA
+0.3 VDC
+9.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1,2
2
3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4
May 2005 - Rev 05-May-05
P1000
P1000
