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BSM200GB120DN2

Part # BSM200GB120DN2
Description Trans IGBT Module N-CH 1.2KV290A 7-Pin 62MM - OTH
Category MODULE
Availability In Stock
Qty 1
Qty Price
1 + $265.27176
Manufacturer Available Qty
EUPEC
Date Code: 20
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Semiconductor Group
7 Mar-29-1996
BSM 200 GB 120 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 4.7
Ω
0 100 200 300 A 500
I
C
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
I
C
= 200 A
0 10 20 30 40
Ω
60
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 4.7
Ω
0 100 200 300 A 500
I
C
0
10
20
30
40
50
60
70
80
mWs
100
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
T
j
= 125°C
par.:
V
CE
= 600V,
V
GE
= ± 15 V,
I
C
= 200 A
0 10 20 30 40
Ω
60
R
G
0
10
20
30
40
50
60
70
80
mWs
100
E
Eon
Eoff
Semiconductor Group
8 Mar-29-1996
BSM 200 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
0.0 0.5 1.0 1.5 2.0 V 3.0
V
F
0
50
100
150
200
250
300
A
400
I
F
T
j
=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
9 Mar-29-1996
BSM 200 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
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