America Semiconductor 16RIA40

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MEDIUM POWER THYRISTORS Stud Version
16RIA SERIES
16A
Bulletin I2404 rev. A 07/00
1
www.irf.com
16RIA
10 to 120 140 to 160
I
T(AV)
16 16 A
@ T
C
85 85 °C
I
T(RMS)
35 35 A
I
TSM
@
50Hz 340 225 A
@ 60Hz 360 235 A
I
2
t@
50Hz 574 255 A
2
s
@ 60Hz 524 235 A
2
s
V
DRM
/V
RRM
100 to 1200 1400 to 1600 V
t
q
typical 110 µs
T
J
- 65 to 125 °C
Parameters Units
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Case Style
TO-208AA (TO-48)
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
16RIA Series
Bulletin I2404 rev. A 07/00
2
www.irf.com
Voltage V
DRM
/V
RRM
, max. repetitive V
RSM
, maximum non- I
DRM
/I
RRM
max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T
J
= T
J
max.
VVmA
10 100 150 20
20 200 300
40 400 500
60 600 700
16RIA 80 800 900 10
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
I
T(AV)
Max. average on-state current 16 16 A 180° sinusoidal conduction
@ Case temperature 85 85 °C
I
T(RMS)
Max. RMS on-state current 35 35 A
I
TSM
Max. peak, one-cycle 340 225 A t = 10ms No voltage
non-repetitive surge current 360 235 t = 8.3ms reapplied
285 190 t = 10ms 100% V
RRM
300 200 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I
2
t for fusing 574 255 A
2
s t = 10ms No voltage Initial T
J
= T
J
max.
524 235 t = 8.3ms reapplied
405 180 t = 10ms 100% V
RRM
375 165 t = 8.3ms reapplied
I
2
t Maximum I
2
t for fusing 5740 2550 A
2
s t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
V
T(TO)1
Low level value of threshold 0.97 1.14 V (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
voltage
V
T(TO)
2
High level value of threshold 1.24 1.31 (I > π x I
T(AV)
), T
J
= T
J
max.
voltage
r
t1
Low level value of on-state 17.9 14.83 m (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
slope resistance
r
t2
High level value of on-state 13.6 12.03 (I > π x I
T(AV)
), T
J
= T
J
max.
slope resistance
V
TM
Max. on-state voltage 1.75 --- V I
pk
= 50 A, T
J
= 25°C
--- 1.80
I
H
Maximum holding current 130 mA T
J
= 25°C. Anode supply 6V, resistive load,
I
L
Latching current 200
16RIA
10 to 120 140 to 160
Parameter Units Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t
p
5ms
16RIA Series
Bulletin I2404 rev. A 07/00
3
www.irf.com
dv/dt Max. critical rate of rise of 100 T
J
= T
J
max. linear to 100% rated V
DRM
off-state voltage 300 (*) T
J
= T
J
max. linear to 67% rated V
DRM
V/µs
Parameter 16RIA Units Conditions
Blocking
P
GM
Maximum peak gate power 8.0 T
J
= T
J
max.
P
G(AV)
Maximum average gate power 2.0
I
GM
Max. peak positive gate current 1.5 A T
J
= T
J
max.
-V
GM
Maximum peak negative 10 V T
J
= T
J
max.
gate voltage
I
GT
DC gate current required 90 T
J
= - 65°C
to trigger 60 mA T
J
= 25°C
35 T
J
= 125°C
V
GT
DC gate voltage required 3.0 T
J
= - 65°C
to trigger 2.0 V T
J
= 25°C
1.0 V T
J
= 125°C
I
GD
DC gate current not to trigger 2.0 mA T
J
= T
J
max., V
DRM
= rated value
V
GD
DC gate voltage not to trigger 0.2 V T
J
= T
J
max.
V
DRM
= rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Parameter 16RIA Units Conditions
Triggering
di/dt Max. rate of rise of turned-on T
J
= T
J
max., V
DM
= rated V
DRM
current V
DRM
600V 20 0 A/µs Gate pulse = 20V, 15, t
p
= 6µs, t
r
= 0.1µs max.
V
DRM
800V 180 I
TM
= (2x rated di/dt) A
V
DRM
1000V 160
V
DRM
1600V 150
t
gt
Typical turn-on time 0.9 T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
t
rr
Typical reverse recovery time 4 µs T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
t
q
Typical turn-off time 110 T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs,
V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
Parameter 16RIA Units Conditions
Switching
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 16RIA160S90.
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
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