Infineon 11N60S5

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2004-03-30Rev. 2.1
Page 1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
V
DS
600 V
R
DS(on)
0.38
I
D
11 A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO262 P-TO220-3-1P-TO263-3-2
2
P
-
TO220
-
3
-
1
2
3
1
Type Package Ordering Code
SPP11N60S5 P-TO220-3-1 Q67040-S4198
SPB11N60S5 P-TO263-3-2 Q67040-S4199
SPI11N60S5 P-TO262 Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
11
7
A
Pulsed drain current, t
p
limited by T
j
ma
x
I
D
p
uls
22
Avalanche energy, single pulse
I
D
= 5.5 A, V
DD
= 50 V
E
AS
340 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1
)
I
D
= 11 A, V
DD
= 50 V
E
AR
0.6
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
11 A
Gate source voltage V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation, T
C
= 25°C P
tot
125 W
Operating and storage temperature T
j
,
T
st
g
-55... +150
°C
2004-03-30Rev. 2.1
Page 2
SPP11N60S5, SPB11N60S5
SPI11N60S5
Maximum Ratings
Parameter
Symbol Value Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 11 A, T
j
= 125 °C
dv/dt 20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
thJC
- - 1 K/W
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=11A - 700 -
Gate threshold voltage V
GS
th
I
D
=500µΑ, V
GS
=V
DS
3.5 4.5 5.5
Zero gate voltage drain current I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25°C,
T
j
=150°C
-
-
-
-
25
250
µA
Gate-source leakage current I
GSS
V
GS
=20V, V
DS
=0V - - 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=7A,
T
j
=25°C
T
j
=150°C
-
-
0.34
0.92
0.38
-
Gate input resistance
R
G
f=1MHz, open Drain - 29 -
2004-03-30Rev. 2.1
Page 3
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=7A
- 6 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 1460 - pF
Output capacitance C
oss
- 610 -
Reverse transfer capacitance C
rss
- 21 -
Effective output capacitance,
3)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 45 - pF
Effective output capacitance,
4)
time related
C
o(tr)
- 85 -
Turn-on delay time t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=11A, R
G
=6.8
- 130 - ns
Rise time t
r
- 35 -
Turn-off delay time t
d(off)
- 150 225
Fall time t
f
- 20 30
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=11A - 10.5 - nC
Gate to drain charge Q
gd
- 24 -
Gate charge total Q
g
V
DD
=350V, I
D
=11A,
V
GS
=0 to 10V
- 41.5 54
Gate plateau voltage V
(plateau)
V
DD
=350V, I
D
=11A - 8 - V
1
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
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