Generic AA026P1-00

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 12/99A
25–29 GHz GaAs MMIC
Driver Amplifier
Features
Single Bias Supply Operation (6 V)
17 dB Typical Small Signal Gain
16 dBm Typical P
1 dB
Output Power
at 26.5 GHz
0.25 µm Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA026P1-00
Description
Alpha’s three-stage reactively-matched 25–29 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 17 dB with a typical P
1 dB
of 16 dBm at 26.5 GHz.
The chip uses Alpha’s proven 0.25 µm MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for gain, output power and S-parameters
prior to shipment for guaranteed performance.
Parameter Condition Symbol Min. Typ.
2
Max. Unit
Drain Current I
DS
120 170 mA
Small Signal Gain F = 25–29 GHz G 14 17 dB
Input Return Loss F = 25–29 GHz RL
I
-8 -6 dB
Output Return Loss F = 25–29 GHz RL
O
-10 -6 dB
Output Power at 1 dB Gain Compression F = 26.5 GHz P
1 dB
14 16 dBm
Saturated Output Power F = 26.5 GHz P
SAT
15 17 dBm
Thermal Resistance
1
Θ
JC
132 °C/W
Electrical Specifications at 25°C (V
DS
= 6 V)
0.000
0.000
0.853
0.561
1.418
1.647
2.120
2.582
3.200
0.112
0.194
1.760
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (T
C
) -55°C to +90°C
Storage Temperature (T
ST
) -65°C to +150°C
Bias Voltage (V
D
)7 V
DC
Power In (P
IN
) 16 dBm
Junction Temperature (T
J
) 175°C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
25–29 GHz GaAs MMIC Driver Amplifier AA026P1-00
2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
-50
-40
-30
-20
-10
0
10
20
20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
(dB)
S
12
S
11
S
22
S
21
Typical Small Signal Performance
S-Parameters (V
D
= 6 V)
Typical Performance Data
6 V
RF IN RF OUT
.01 µF 50 pF
Bias Arrangement
Detail A
RF IN RF OUT
V+
See
Detail A
Circuit Schematic
For biasing on, adjust V
DS
from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.

Freelance Electronics
13197 Sandoval Street
Santa Fe Springs, CA 90670

Hours of Operation  (Holiday Hours)
Monday-Friday 7:30am-4:30pm PST
(Deadline for next day shipment 2:00pm PST)

Trustworthy Standards Serving the Electronic Components
Industry since 1986

Government Cage code#-1V4R6
Duns Number# 788130532
Certified Small Disadvantaged Business