America Semiconductor 10RIA100

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MEDIUM POWER THYRISTORS Stud Version
10RIA SERIES
1
10A
Bulletin I2405 rev. A 07/00
I
T(AV)
10 A
@ T
C
85 °C
I
T(RMS)
25 A
I
TSM
@
50Hz 225 A
@ 60Hz 240 A
I
2
t@
50Hz 255 A
2
s
@ 60Hz 233 A
2
s
V
DRM
/V
RRM
100 to 1200 V
t
q
typical 110 µs
T
J
- 65 to 125 °C
Parameters 10RIA Unit
Major Ratings and Characteristics
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V V
DRM
/ V
RRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Case Style
TO-208AA (TO-48)
www.irf.com
10RIA Series
Bulletin I2405 rev. A 07/00
2
www.irf.com
I
T(AV)
Max. average on-state current 10 A 180° conduction, half sine wave
@ Case temperature 85 °C
I
T(RMS)
Max. RMS on-state current 25 A
I
TSM
Max. peak, one-cycle 225 t = 10ms No voltage
non-repetitive surge current 240 t = 8.3ms reapplied
190 t = 10ms 100% V
RRM
200 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I
2
t for fusing 255 t = 10ms No voltage Initial T
J
= T
J
max.
233 t = 8.3ms reapplied
180 t = 10ms 100% V
RRM
165 t = 8.3ms reapplied
I
2
t Maximum I
2
t for fusing 2550 A
2
s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold 1.10 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
voltage
V
T(TO)
2
High level value of threshold 1.39 (I > π x I
T(AV)
), T
J
= T
J
max.
voltage
r
t1
Low level value of on-state 24.3 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
slope resistance
r
t2
High level value of on-state 16.7 (I > π x I
T(AV)
), T
J
= T
J
max.
slope resistance
V
TM
Max. on-state voltage 1.75 V I
pk
= 32A, T
J
= 25°C t
p
= 10ms sine pulse
I
H
Maximum holding current 130
I
L
Typical latching current 200
Parameter 10RIA Units Conditions
On-state Conduction
A
2
s
m
V
A
mA
T
J
= 25°C, anode supply 12V resistive load
Voltage V
DRM
/V
RRM
, max. repetitive V
RSM
, maximum non- I
DRM
/I
RRM
max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T
J
= T
J
max.
VVmA
10 100 150 20
20 200 300
40 400 500
60 600 700
10RIA 80 800 900 10
100 1000 1100
120 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t
p
5ms
10RIA Series
Bulletin I2405 rev. A 07/00
3
www.irf.com
dv/dt Max. critical rate of rise of 100 T
J
= T
J
max. linear to 100% rated V
DRM
off-state voltage 300 (*) T
J
= T
J
max. linear to 67% rated V
DRM
V/µs
Parameter 10RIA Units Conditions
Blocking
P
GM
Maximum peak gate power 8.0 T
J
= T
J
max.
P
G(AV)
Maximum average gate power 2.0
I
GM
Max. peak positive gate current 1.5 A T
J
= T
J
max.
-V
GM
Maximum peak negative 10 V T
J
= T
J
max.
gate voltage
I
GT
DC gate current required 90 T
J
= - 65°C
to trigger 60 mA T
J
= 25°C
35 T
J
= 125°C
V
GT
DC gate voltage required 3.0 T
J
= - 65°C
to trigger 2.0 V T
J
= 25°C
1.0 V T
J
= 125°C
I
GD
DC gate current not to trigger 2.0 mA T
J
= T
J
max., V
DRM
= rated value
V
GD
DC gate voltage not to trigger 0.2 V T
J
= T
J
max.
V
DRM
= rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Parameter 10RIA Units Conditions
Triggering
di/dt Max. rate of rise of turned-on T
J
= T
J
max., V
DM
= rated V
DRM
current V
DRM
600V 2 00 A/µs Gate pulse = 20V, 15, t
p
= 6µs, t
r
= 0.1µs max.
V
DRM
800V 180 I
TM
= (2x rated di/dt) A
V
DRM
1000V 160
V
DRM
1600V 150
t
gt
Typical turn-on time 0.9 T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
t
rr
Typical reverse recovery time 4 µs T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
t
q
Typical turn-off time 110 T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs,
V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
Parameter 10RIA Units Conditions
Switching
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90.
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
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