4
Input Leakage
Current
I
I
V
CC
or
GND
-6--±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
0 6 - - 2 - 20 - 40 µA
HCT TYPES
Input Switch Points
(Note 2)
V
T
+ - - 4.5 1.2 - 1.9 1.2 1.9 1.2 1.9 V
5.5 1.4 - 2.1 1.4 2.1 1.4 2.1 V
V
T
- - - 4.5 0.5 - 1.2 0.5 1.2 0.5 1.2 V
5.5 0.6 - 1.4 0.6 1.4 0.6 1.4 V
V
H
- - 4.5 0.4 - 1.4 0.4 1.4 0.4 1.4 V
5.5 0.4 - 1.5 0.4 1.5 0.4 1.5 V
High Level Output
Voltage
CMOS Loads
-
V
T
+
or
V
T
-
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
High Level Output
Voltage
TTL Loads
-4 4.5 3.98 - - 3.84 - 3.7 - V
Low Level Output
Voltage CMOS Loads
V
OL
V
T
+
or
V
T
-
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
4 4.5 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current
I
I
V
CC
and
GND
- 5.5 - - ±0.1 - ±1-±1 µA
Quiescent Device
Current
I
CC
V
CC
or
GND
0 5.5 - - 2 - 20 - 40 µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 3)
V
CC
- 2.1
- 4.5 to
5.5
- 100 360 - 450 - 490 µA
NOTES:
2. Hysteresis definition, characteristic and test setup see Test Circuits and Waveforms
3. For dual-supply systems theoretical worst case (V
I
= 2.4V, V
CC
= 5.5V) specification is 1.8mA.
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C -40
o
C TO 85
o
C -55
o
C TO 125
o
C
UNITSV
I
(V) I
O
(mA) MIN TYP MAX MIN MAX MIN MAX
CD54HC132, CD74HC132, CD54HCT132, CD74HCT132